PART |
Description |
Maker |
TCO-787NH TCO-786NH |
TCO-786NH
|
EPSONTOYOCOM[Epson ToYoCom]
|
EYP1BF145 EYP1BF101 EYP2BN082 EYP2BN099 EYP1BF115 |
Thermal Cutoffs (TCO)
|
Panasonic Semiconductor
|
AS-V-345XT 0191540012 |
BUTT SPLICE PVC INSUL/EXPD TPD (AS-V-345
|
Molex Electronics Ltd.
|
AM9114CDCB AM91L14E/BVA AM9114EPC AM9114C/BVA AM91 |
x4 SRAM 15NS, OTP, PLCC, EXT TEMP, ROHS-A(EPLD) 5V, 20MHZ, SOIC, IND TEMP, GREEN(MCU AVR) QTR PWR,250NS,CERDIP,883C;LEV B(EPLD) x4的SRAM 25NS, OTP, PLCC, IND TEMP(EPLD) x4的SRAM 25NS, OTP, PDIP, COM TEM(EPLD) x4的SRAM
|
Linear Technology, Corp. Rohm Co., Ltd.
|
ES1D-13-F ES1C-13-F |
RECTIFIER FAST-RECOVERY SINGLE 1A 200V 30A-ifsm 0.98V-vf 25ns 5uA-ir SMA 5K/REEL-13 1 A, 200 V, SILICON, SIGNAL DIODE RECTIFIER FAST-RECOVERY SINGLE 1A 150V 30A-ifsm 0.98V-vf 25ns 5uA-ir SMA 5K/REEL-13
|
Diodes, Inc. DIODES INC
|
5962-0153201QYX 5962D0153201QYX 5962L0153201QYA 59 |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose none. 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose none. 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none. 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose none. 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
|
Aeroflex Circuit Technology
|
CY7C4261V CY7C4271V 7C4291V CY7C4271V-25JC CY7C426 |
128K x 9 low voltage Deep Sync FIFO, 15ns 64K x 9 low voltage Deep Sync FIFO, 25ns 64K x 9 low voltage Deep Sync FIFO, 15ns 16K x 9 low voltage Deep Sync FIFO, 25ns 32K x 9 low voltage Deep Sync FIFO, 15ns 16K x 9 low voltage Deep Sync FIFO, 15ns 32K x 9 low voltage Deep Sync FIFO, 25ns From old datasheet system 16K/32K/64K/128Kx9 Low Voltage Deep Sync FIFOs
|
Cypress
|
IDT7052S25PQF |
SMD-IC,MEM,SRAM,2KX8 25NS,4PORT,PAR,PQFP 2K X 8 FOUR-PORT SRAM, 25 ns, PQFP132
|
Integrated Device Technology, Inc.
|
UG8JT UGF8JT UGB8HT UG8HT |
Ultrafast Rectifiers, Forward Current 8.0A, Reverse Recovery Time 25ns, Reverse Voltage 500 to 600V
|
VISHAY
|
UGF5JT UG5HT UG5JT UGB5HT UGB5JT UGF5HT |
Ultrafast Rectifiers, Forward Current 5.0A, Reverse Recovery Time 25ns, Reverse Voltage 500 to 600V From old datasheet system
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
|